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NSV60601

NSV60601MZ4T1G vs NSV60601MZ4T3G vs NSV60601MZ4

 
PartNumberNSV60601MZ4T1GNSV60601MZ4T3GNSV60601MZ4
DescriptionBipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
ManufacturerON SemiconductorON SemiconductorON
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF
RoHSYY-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max60 V60 V-
Collector Base Voltage VCBO100 V100 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage0.085 V0.3 V0.085 V
Maximum DC Collector Current6 A-12 A
Gain Bandwidth Product fT100 MHz100 MHz100 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesNSS60601MZ4NSS60601MZ4NSS60601MZ4
DC Current Gain hFE Max360 at 1 A, 2 V-360 at 1 A at 2 V
PackagingReelReelReel
BrandON SemiconductorON Semiconductor-
DC Collector/Base Gain hfe Min12050-
Pd Power Dissipation2 W800 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity10004000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003877 oz0.006632 oz
Technology-Si-
Continuous Collector Current-6 A-
Package Case--SOT-223-4
Pd Power Dissipation--2 W
Collector Emitter Voltage VCEO Max--60 V
Collector Base Voltage VCBO--100 V
Emitter Base Voltage VEBO--6 V
DC Collector Base Gain hfe Min--120 at 1 A at 2 V
Manufacturer Part # Description RFQ
NSV60601MZ4T1G Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
NSV60601MZ4T3G Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
NSV60601MZ4 New and Original
ON Semiconductor
ON Semiconductor 		NSV60601MZ4T3G Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
NSV60601MZ4T1G Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
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