 |  | | |
| PartNumber | NSVBC817-16LT1G | NSVBC817-40WT1G | NSVBC817 |
| Description | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V | Bipolar Transistors - Pre-Biased SS SC70 GP XSTR NPN 45V | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 700 mV | - | - |
| Maximum DC Collector Current | 500 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 250 | - | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors - Pre-Biased | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000282 oz | 0.000212 oz | - |
| Series | - | BC817-40W | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NSVBC817-16LT1G | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V | ||
| NSVBC818-40LT1G | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 50V | ||
| NSVBC817-40WT1G | Bipolar Transistors - Pre-Biased SS SC70 GP XSTR NPN 45V | ||
| NSVBC817 | New and Original | ||
ON Semiconductor |
NSVBC817-40WT1G | TRANS NPN GP 45V 500MA SC70-3 | |
| NSVBC818-40LT1G | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 50V | ||
| NSVBC817-16LT1G | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V |