PartNumber | NSVBC847BTT1G | NSVBC847BLT3G | NSVBC847BDW1T2G |
Description | Bipolar Transistors - BJT SS SC75 GP XSTR NPN | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V | Bipolar Transistors - BJT SS SC88 GP XSTR NPN 45V |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Series | BC847ATT1 | - | BC847BDW1 |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 10000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | Si | Si |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | SOT-23-3 | SOT-363-6 |
Transistor Polarity | - | NPN | NPN |
Configuration | - | Single | Dual |
Collector Emitter Voltage VCEO Max | - | 45 V | 45 V |
Collector Base Voltage VCBO | - | 50 V | 50 V |
Emitter Base Voltage VEBO | - | 6 V | 6 V |
Collector Emitter Saturation Voltage | - | 0.6 V | 0.6 V |
Gain Bandwidth Product fT | - | 100 MHz | 100 MHz |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
DC Current Gain hFE Max | - | 450 | 450 |
Continuous Collector Current | - | 100 mA | 100 mA |
DC Collector/Base Gain hfe Min | - | 200 | 200 |
Pd Power Dissipation | - | 225 mW | 380 mW |
Unit Weight | - | 0.000282 oz | 0.000265 oz |