PartNumber | NSVBCP56-10T3G | NSVBCP53-16T3G | NSVBCP68T1G |
Description | Bipolar Transistors - BJT SS SOT223 GP XSTR NPN 80V | Bipolar Transistors - BJT SS SOT223 GP XSTR PNP 80V | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-223-4 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 80 V | - | - |
Collector Base Voltage VCBO | 100 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 500 mV | - | - |
Maximum DC Collector Current | 1 A | - | - |
Gain Bandwidth Product fT | 130 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
DC Current Gain hFE Max | 160 at 150 mA, 2 V | - | - |
Packaging | Reel | Reel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
DC Collector/Base Gain hfe Min | 63 at 150 mA, 2 V | - | - |
Pd Power Dissipation | 1.5 W | - | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 4000 | 4000 | - |
Subcategory | Transistors | Transistors | - |