PartNumber | NSVMUN531335DW1T1G | NSVMUN5312DW1T2G | NSVMUN5312DW1T3G |
Description | Bipolar Transistors - Pre-Biased SS SC88 BR XSTR NPN/PNP 5 | Bipolar Transistors - Pre-Biased SS SC88 BR XSTR DUAL 50V | Bipolar Transistors - Pre-Biased SS SC88 BR XSTR DUAL 50V |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | Y |
Configuration | Dual | - | - |
Transistor Polarity | NPN, PNP | - | - |
Typical Input Resistor | 47 kOhms | - | - |
Typical Resistor Ratio | 1, 0.047 | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-363-6 | - | - |
DC Collector/Base Gain hfe Min | 80 | - | - |
Collector Emitter Voltage VCEO Max | 50 V | - | - |
Continuous Collector Current | 100 mA | - | - |
Pd Power Dissipation | 385 mW | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Channel Mode | Enhancement | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 10000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000265 oz | - | - |
Series | - | MUN5312DW1 | MUN5312DW1 |