NTB641

NTB6410ANT4G vs NTB6410AN vs NTB6410ANT4G-CUT TAPE

 
PartNumberNTB6410ANT4GNTB6410ANNTB6410ANT4G-CUT TAPE
DescriptionMOSFET NFET D2PAK 100V 76A 13MOH
ManufacturerON SemiconductorON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current76 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge120 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation188 W--
ConfigurationSingle--
PackagingReel--
SeriesNTB6410AN--
Transistor Type1 N-Channel--
BrandON Semiconductor--
Forward Transconductance Min40 S--
Fall Time190 ns--
Product TypeMOSFET--
Rise Time170 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time120 ns--
Typical Turn On Delay Time17 ns--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
NTB6413ANT4G MOSFET NFET D2PAK 100V 40A 30MO
NTB6410ANT4G MOSFET NFET D2PAK 100V 76A 13MOH
NTB6410AN New and Original
NTB6412NG New and Original
NTB6413AN New and Original
NTB6410ANT4G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NTB6411ANT4G MOSFET NFET D2PAK 100V 75A 16MO
NTB6412ANT4G MOSFET NFET D2PAK 100V 59A 20MO
NTB6410ANG MOSFET N-CH 100V 76A D2PAK
NTB6410ANT4G MOSFET N-CH 100V 76A D2PAK
NTB6411ANG MOSFET N-CH 100V 72A D2PAK
NTB6411ANT4G MOSFET N-CH 100V 72A D2PAK
NTB6412ANG MOSFET N-CH 100V 58A D2PAK
NTB6413ANG MOSFET N-CH 100V 42A D2PAK
NTB6413ANT4G Darlington Transistors MOSFET NFET D2PAK 100V 40A 30MO
NTB6412ANT4G IGBT Transistors MOSFET NFET D2PAK 100V 59A 20MO
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