PartNumber | NTD4809NT4G | NTD4810N-1G | NTD4809NHT4G |
Description | MOSFET NFET 30V 58A 9MOHM | MOSFET NFET 30V 54A 10MOHM | MOSFET NFET DPAK 30V 58A 9MOHM |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 11.5 A | 10.8 A | 11.5 A |
Rds On Drain Source Resistance | 9 mOhms | 10 mOhms | 9 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 2 W | 2 W | 2 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | - | Reel |
Height | 2.38 mm | 6.35 mm | 2.38 mm |
Length | 6.73 mm | 6.73 mm | 6.73 mm |
Series | NTD4809N | - | NTD4809NH |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | FETs - MOSFETs | - | - |
Width | 6.22 mm | 2.38 mm | 6.22 mm |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Forward Transconductance Min | 9 S | - | - |
Fall Time | 5.3 ns, 2.8 ns | 3.8 ns, 2.6 ns | 5 ns, 3 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 21.3 ns, 22.7 ns | 20.7 ns | 20 ns, 18 ns |
Factory Pack Quantity | 2500 | 75 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15.1 ns, 25.3 ns | 13.8 ns, 21.8 ns | 14 ns, 22 ns |
Typical Turn On Delay Time | 12.3 ns, 7 ns | 11.5 ns, 7.2 ns | 12 ns, 7 ns |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |