NTD4856

NTD4856NT4G vs NTD4856N-1G vs NTD4856N-35G

 
PartNumberNTD4856NT4GNTD4856N-1GNTD4856N-35G
DescriptionMOSFET NFET 25V 89A 0.0047R DPAKMOSFET NFET 25V 89A 0.0047R DPAKMOSFET N-CH 25V 13.3A IPAK
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseTO-252-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current16.8 A16.8 A-
Rds On Drain Source Resistance5.3 mOhms5.3 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation2.14 W2.14 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReel--
Height2.38 mm6.35 mm-
Length6.73 mm6.73 mm-
Transistor Type1 N-Channel1 N-Channel-
TypePower Trench MOSFETPower Trench MOSFET-
Width6.22 mm2.38 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min73 S73 S-
Fall Time7.5 ns7.5 ns-
Product TypeMOSFETMOSFET-
Rise Time22.5 ns22.5 ns-
Factory Pack Quantity250075-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27.2 ns27.2 ns-
Typical Turn On Delay Time15.7 ns15.7 ns-
Unit Weight0.139332 oz0.139332 oz-
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
NTD4856NT4G MOSFET NFET 25V 89A 0.0047R DPAK
NTD4856N-1G MOSFET NFET 25V 89A 0.0047R DPAK
NTD4856N-1G MOSFET N-CH 25V 13.3A IPAK
NTD4856N-35G MOSFET N-CH 25V 13.3A IPAK
NTD4856NT4G MOSFET N-CH 25V 13.3A DPAK
NTD4856N New and Original
NTD4856N 4856NG ON New and Original
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