NTD5862

NTD5862NT4G vs NTD5862N vs NTD5862NT4G , FL1100-1Q0

 
PartNumberNTD5862NT4GNTD5862NNTD5862NT4G , FL1100-1Q0
DescriptionMOSFET NFET DPAK 60V 102A 6MOHM
ManufacturerON SemiconductorON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current98 A--
Rds On Drain Source Resistance5.7 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge82 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation115 W--
ConfigurationSingleSingle-
PackagingReelTube-
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor--
Fall Time60 ns60 ns-
Product TypeMOSFET--
Rise Time70 ns70 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns35 ns-
Typical Turn On Delay Time18 ns18 ns-
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-115 W-
Id Continuous Drain Current-98 A-
Vds Drain Source Breakdown Voltage-60 V-
Vgs th Gate Source Threshold Voltage-2 V-
Rds On Drain Source Resistance-4.4 mOhms-
Manufacturer Part # Description RFQ
NTD5862NT4G MOSFET NFET DPAK 60V 102A 6MOHM
NTD5862N New and Original
NTD5862NT4G , FL1100-1Q0 New and Original
NTD5862NT4G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NTD5862N-1G MOSFET NFET IPAK 60V 102A 6MOHM
NTD5862NT4G MOSFET N-CH 60V 98A DPAK
NTD5862N-1G IGBT Transistors MOSFET NFET IPAK 60V 102A 6MOHM
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