 | |  | |
| PartNumber | NTD6416ANLT4G | NTD6416ANL-1G | NTD6416ANL |
| Description | MOSFET NFET DPAK 100V 17A 106MO | MOSFET NFET DPAK 100V 15A 86MOHM | |
| Manufacturer | ON Semiconductor | ON Semiconductor | O |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 19 A | 19 A | - |
| Rds On Drain Source Resistance | 74 mOhms | 74 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 25 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 71 W | 71 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | NTD6416ANL | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Forward Transconductance Min | 18 S | - | - |
| Fall Time | 40 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 2500 | 75 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NTD6416ANLT4G | MOSFET NFET DPAK 100V 17A 106MO | ||
| NTD6416ANL | New and Original | ||
ON Semiconductor |
NTD6416ANL-1G | MOSFET NFET DPAK 100V 15A 86MOHM | |
| NTD6416ANL-1G | IGBT Transistors MOSFET NFET DPAK 100V 15A 86MOHM | ||
| NTD6416ANLT4G | IGBT Transistors MOSFET NFET DPAK 100V 17A 106MO |