NTE4153

NTE4153NT1G vs NTE4153N vs NTE4153NSC

 
PartNumberNTE4153NT1GNTE4153NNTE4153NSC
DescriptionMOSFET 20V 915mA N-Channel
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSC-89-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current915 mA--
Rds On Drain Source Resistance230 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge1.82 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.7 mm--
Length1.6 mm--
ProductMOSFET Small Signal--
SeriesNTE4153N--
Transistor Type1 N-Channel--
TypeMOSFET--
Width0.85 mm--
BrandON Semiconductor--
Forward Transconductance Min1.4 S--
Fall Time7.6 ns--
Product TypeMOSFET--
Rise Time4.4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time3.7 ns--
Unit Weight0.001058 oz--
Manufacturer Part # Description RFQ
NTE4153NT1G MOSFET 20V 915mA N-Channel
NTE4153N New and Original
NTE4153NSC New and Original
NTE4153NT1G , MAX810TUR New and Original
NTE4153NT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NTE4153NT1G MOSFET N-CH 20V 915MA SC-89
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