PartNumber | NTF3055L108T1G | NTF3055L108T1 | NTF3055L108T1G , LP2985I |
Description | MOSFET 60V 3A N-Channel | MOSFET 60V 3A N-Channel | |
Manufacturer | ON Semiconductor | ON | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-223-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 3 A | - | - |
Rds On Drain Source Resistance | 120 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 5 V | - | - |
Qg Gate Charge | 7.6 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 2.1 W | - | - |
Configuration | Single | Single Dual Drain | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 1.57 mm | - | - |
Length | 6.5 mm | - | - |
Series | NTF3055L108 | NTF3055L108 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | MOSFET | - | - |
Width | 3.5 mm | - | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 5.7 S | - | - |
Fall Time | 27 ns | 27 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 35 ns | 35 ns | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 22 ns | 22 ns | - |
Typical Turn On Delay Time | 11 ns | 11 ns | - |
Unit Weight | 0.008818 oz | 0.008826 oz | - |
Package Case | - | TO-261-4, TO-261AA | - |
Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-223 | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 1.3W | - |
Drain to Source Voltage Vdss | - | 60V | - |
Input Capacitance Ciss Vds | - | 440pF @ 25V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 3A (Ta) | - |
Rds On Max Id Vgs | - | 120 mOhm @ 1.5A, 5V | - |
Vgs th Max Id | - | 2V @ 250μA | - |
Gate Charge Qg Vgs | - | 15nC @ 5V | - |
Pd Power Dissipation | - | 2.1 W | - |
Vgs Gate Source Voltage | - | 15 V | - |
Id Continuous Drain Current | - | 3 A | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Rds On Drain Source Resistance | - | 120 mOhms | - |
Forward Transconductance Min | - | 5.7 S | - |