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| PartNumber | NTGD4167CT1G | NTGD4167CT1 | NTGD4167CT1G SI3590DV- |
| Description | MOSFET COMP 30V 2.9A 0.090 TSOP6 | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOP-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 2.6 A, 1.9 A | - | - |
| Rds On Drain Source Resistance | 90 mOhms, 300 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V, - 2.5 V | - | - |
| Qg Gate Charge | 3.7 nC, 3.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.1 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.94 mm | - | - |
| Length | 3 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTGD4167C | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Width | 1.5 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 2.6 S, 2.6 S | - | - |
| Fall Time | 2 ns, 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns, 8 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 14 ns, 22 ns | - | - |
| Typical Turn On Delay Time | 7 ns, 8 ns | - | - |
| Unit Weight | 0.000705 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor |
NTGD4167CT1G | MOSFET COMP 30V 2.9A 0.090 TSOP6 | |
| NTGD4167CT1G | IGBT Transistors MOSFET COMP 30V 2.9A 0.090 TSOP6 | ||
| NTGD4167CT1 | New and Original | ||
| NTGD4167CT1G SI3590DV- | New and Original | ||
| NTGD4167CTTGR | New and Original |