PartNumber | NTHD4102PT1G | NTHD3133PFT3G | NTHD4102PT3G |
Description | MOSFET -20V -4.1A Dual P-Channel | MOSFET -20V -4.4A P-CHANNEL W/3.7A SCHOTTKY | MOSFET 2P-CH 20V 2.9A CHIPFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | ChipFET-8 | ChipFET-8 | - |
Number of Channels | 2 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 4.1 A | 3.2 A | - |
Rds On Drain Source Resistance | 120 mOhms | 80 mOhms | - |
Vgs Gate Source Voltage | 8 V | 8 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 600 mW | 1.1 W | - |
Configuration | Dual | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Tape & Reel (TR) Alternate Packaging |
Height | 1.05 mm | 1.05 mm | - |
Length | 3.05 mm | 3.05 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Series | NTHD4102P | - | - |
Transistor Type | 2 P-Channel | 1 P-Channel | - |
Type | MOSFET | - | - |
Width | 1.65 mm | 1.65 mm | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Forward Transconductance Min | 7 S | - | - |
Fall Time | 12 ns | 11.7 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 12 ns | 11.7 ns | - |
Factory Pack Quantity | 3000 | 10000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 32 ns | 16 ns | - |
Typical Turn On Delay Time | 5.5 ns | 5.8 ns | - |
Unit Weight | 0.002998 oz | 0.002998 oz | - |
Package Case | - | - | 8-SMD, Flat Lead |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | ChipFET |
FET Type | - | - | 2 P-Channel (Dual) |
Power Max | - | - | 1.1W |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | 750pF @ 16V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 2.9A |
Rds On Max Id Vgs | - | - | 80 mOhm @ 2.9A, 4.5V |
Vgs th Max Id | - | - | 1.5V @ 250μA |
Gate Charge Qg Vgs | - | - | 8.6nC @ 4.5V |