PartNumber | NTHD3100CT1G | NTHD3100C | NTHD3100CT1G (C9) |
Description | MOSFET 20V +3.9A/-4.4A Complementary | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | ChipFET-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel, P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 3.9 A, 3.2 A | - | - |
Rds On Drain Source Resistance | 80 mOhms, 110 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 600 mV, 450 mV | - | - |
Vgs Gate Source Voltage | 4.5 V, - 2.5 V | - | - |
Qg Gate Charge | 2.3 nC, 7.4 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 3.1 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.05 mm | - | - |
Length | 3.05 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | NTHD3100C | - | - |
Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
Type | MOSFET | - | - |
Width | 1.65 mm | - | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 6 S, 8 S | - | - |
Fall Time | 1.5 ns, 12.4 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 10.7 ns, 11.7 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 9.6 ns, 16 ns | - | - |
Typical Turn On Delay Time | 6.3 ns, 5.8 ns | - | - |
Unit Weight | 0.002998 oz | - | - |