PartNumber | NTJD1155LT1G | NTJD1155LT1(G) | NTJD1155LT1G , FLZ6V8B |
Description | MOSFET 8V +/-1.3A P-Channel w/Level Shift | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SC-88-6 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 8 V | - | - |
Id Continuous Drain Current | 1.3 A | - | - |
Rds On Drain Source Resistance | 175 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
Vgs Gate Source Voltage | 4.5 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 400 mW | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 0.9 mm | - | - |
Length | 2 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | NTJD1155L | - | - |
Transistor Type | 2 P-Channel | - | - |
Type | MOSFET | - | - |
Width | 1.25 mm | - | - |
Brand | ON Semiconductor | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.001093 oz | - | - |