NTLGD

NTLGD3502NT1G vs NTLGD3402PT1G vs NTLGD3502N

 
PartNumberNTLGD3502NT1GNTLGD3402PT1GNTLGD3502N
DescriptionMOSFET NFET DFN 20V 4.6A 3X3mm 60M
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.3 A--
Rds On Drain Source Resistance60 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.74 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.87 mm--
Length3 mm--
ProductMOSFET Small Signal--
Transistor Type2 N-Channel--
Width3 mm--
BrandON Semiconductor--
Fall Time17.5 ns--
Product TypeMOSFET--
Rise Time17.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8.6 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.000744 oz--
Manufacturer Part # Description RFQ
NTLGD3502NT2G MOSFET NFET DFN 20V 4.6A 3X3 60M
NTLGD3402PT1G New and Original
NTLGD3502N New and Original
ON Semiconductor
ON Semiconductor
NTLGD3502NT1G MOSFET NFET DFN 20V 4.6A 3X3mm 60M
NTLGD3502NT1G MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
NTLGD3502NT2G RF Bipolar Transistors MOSFET NFET DFN 20V 4.6A 3X3 60M
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