PartNumber | NTMFS5832NLT1G | NTMFS5832NL | NTMFS5834NLT3G |
Description | MOSFET NFET SO8FL 40V 110A 4.2MO | ||
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-FL-8 | - | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Id Continuous Drain Current | 20 A | - | - |
Rds On Drain Source Resistance | 6.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Qg Gate Charge | 25 nC | - | - |
Pd Power Dissipation | 3.1 W | - | - |
Packaging | Reel | Reel | - |
Series | NTMFS5832NL | NTMFS5832NL | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 21 S | - | - |
Fall Time | 8 ns | 8 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 24 ns | 24 ns | - |
Factory Pack Quantity | 1500 | - | - |
Subcategory | MOSFETs | - | - |
Package Case | - | SO-8FL | - |
Pd Power Dissipation | - | 3.1 W | - |
Id Continuous Drain Current | - | 20 A | - |
Vds Drain Source Breakdown Voltage | - | 40 V | - |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Rds On Drain Source Resistance | - | 6.5 mOhms | - |
Qg Gate Charge | - | 25 nC | - |
Forward Transconductance Min | - | 21 S | - |