NTR4170NT

NTR4170NT1G vs NTR4170NT3G vs NTR4170NT1G-CUT TAPE

 
PartNumberNTR4170NT1GNTR4170NT3GNTR4170NT1G-CUT TAPE
DescriptionMOSFET NFET SOT23 30V 4A TRMOSFET NFET SOT23 30V 4A
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current3.9 A4 A-
Rds On Drain Source Resistance55 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge4.76 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
Height0.94 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesNTR4170N--
Transistor Type1 N-Channel1 N-Channel-
TypePower MOSFET--
Width1.3 mm--
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min8 S--
Fall Time3.5 ns--
Product TypeMOSFETMOSFET-
Rise Time9.9 ns--
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15.1 ns--
Typical Turn On Delay Time6.4 ns--
Unit Weight0.050717 oz0.000282 oz-
Manufacturer Part # Description RFQ
NTR4170NT1G MOSFET NFET SOT23 30V 4A TR
NTR4170NT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NTR4170NT3G MOSFET NFET SOT23 30V 4A
NTR4170NT1G MOSFET N-CH 30V 3.2A SOT23
NTR4170NT3G MOSFET N-CH 30V 3.2A SGL SOT23-3
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