 |  | | |
| PartNumber | NTS2101PT1G | NTS2101P | NTS2101PT |
| Description | MOSFET -8V -1.4A P-Channel | ||
| Manufacturer | ON Semiconductor | - | ON |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 8 V | - | - |
| Id Continuous Drain Current | 1.4 A | - | - |
| Rds On Drain Source Resistance | 100 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 6.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 290 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.85 mm | - | - |
| Length | 2.1 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTS2101P | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 1.24 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Fall Time | 18 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26 ns | - | - |
| Typical Turn On Delay Time | 6.2 ns | - | - |
| Unit Weight | 0.000176 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NTS2101PT1G | MOSFET -8V -1.4A P-Channel | ||
| NTS2101P | New and Original | ||
| NTS2101PT | New and Original | ||
| NTS2101PT1G , MAX6503UKP | New and Original | ||
| NTS2101PT1G-CUT TAPE | New and Original | ||
ON Semiconductor |
NTS2101PT1 | MOSFET P-CH 8V 1.4A SOT-323 | |
| NTS2101PT1G | MOSFET P-CH 8V 1.4A SOT-323 |