PartNumber | NTS4001NT1G | NTS4001(ONSEMI) | NTS4001N |
Description | MOSFET 30V 270mA N-Channel | ||
Manufacturer | ON Semiconductor | - | ON Semiconductor |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SC-70-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 270 mA | - | - |
Rds On Drain Source Resistance | 1.5 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
Vgs Gate Source Voltage | 4 V | - | - |
Qg Gate Charge | 0.9 ns | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 330 mW (1/3 W) | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 0.85 mm | - | - |
Length | 2.1 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | NTS4001N | - | NTS4001N |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 1.24 mm | - | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 80 mS | - | - |
Fall Time | 82 ns | - | 23 ns |
Product Type | MOSFET | - | - |
Rise Time | 23 ns | - | 23 ns |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 94 ns | - | 94 ns |
Typical Turn On Delay Time | 17 ns | - | 17 ns |
Unit Weight | 0.000219 oz | - | 0.000219 oz |
Package Case | - | - | SC-70, SOT-323 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | SC-70-3 (SOT323) |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 330mW |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 33pF @ 5V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 270mA (Ta) |
Rds On Max Id Vgs | - | - | 1.5 Ohm @ 10mA, 4V |
Vgs th Max Id | - | - | 1.5V @ 100μA |
Gate Charge Qg Vgs | - | - | 1.3nC @ 5V |
Pd Power Dissipation | - | - | 330 mW |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 270 mA |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Rds On Drain Source Resistance | - | - | 1.5 Ohms |