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| PartNumber | NTS4409NT1G | NTS4409N | NTS4409NT1G , MAX6505UTP |
| Description | MOSFET NFET 25V/8V 75mA 350 | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SC-70-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 750 mA | - | - |
| Rds On Drain Source Resistance | 350 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 650 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 1.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 330 mW (1/3 W) | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.85 mm | - | - |
| Length | 2.1 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTS4409N | NTS4409N | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 1.24 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 0.5 S | - | - |
| Fall Time | 41 ns | 8.2 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.2 ns | 8.2 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns | 23 ns | - |
| Typical Turn On Delay Time | 5 ns | 5 ns | - |
| Unit Weight | 0.000219 oz | 0.000219 oz | - |
| Package Case | - | SC-70, SOT-323 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SC-70-3 (SOT323) | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 280mW | - |
| Drain to Source Voltage Vdss | - | 25V | - |
| Input Capacitance Ciss Vds | - | 60pF @ 10V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 700mA (Ta) | - |
| Rds On Max Id Vgs | - | 350 mOhm @ 600mA, 4.5V | - |
| Vgs th Max Id | - | 1.5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 1.5nC @ 4.5V | - |
| Pd Power Dissipation | - | 280 mW | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 750 mA | - |
| Vds Drain Source Breakdown Voltage | - | 25 V | - |
| Rds On Drain Source Resistance | - | 350 mOhms | - |
| Forward Transconductance Min | - | 0.5 S | - |