NTTFS51

NTTFS5116PLTWG vs NTTFS5116PLTAG vs NTTFS5116PLTAG-CUT TAPE

 
PartNumberNTTFS5116PLTWGNTTFS5116PLTAGNTTFS5116PLTAG-CUT TAPE
DescriptionMOSFET PFET U8FL 60VMOSFET PFET U8FL 60V
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseWDFN-8WDFN-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current5.7 A5.7 A-
Rds On Drain Source Resistance72 mOhms72 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage4.5 V4.5 V-
Qg Gate Charge25 nC25 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation40 W40 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesNTTFS5116PLNTTFS5116PL-
Transistor Type1 P-Channel1 P-Channel-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min11 S11 S-
Fall Time37 ns37 ns-
Product TypeMOSFETMOSFET-
Rise Time58 ns58 ns-
Factory Pack Quantity50001500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time30 ns30 ns-
Typical Turn On Delay Time15 ns15 ns-
Manufacturer Part # Description RFQ
NTTFS5116PLTWG MOSFET PFET U8FL 60V
NTTFS5116PLTAG MOSFET PFET U8FL 60V
NTTFS5116PLTAG-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NTTFS5116PLTAG IGBT Transistors MOSFET PFET U8FL 60V
NTTFS5116PLTWG RF Bipolar Transistors MOSFET PFET U8FL 60V
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