NUS24

NUS2401SNT1G vs NUS2401 vs NUS2401SNT1/50X

 
PartNumberNUS2401SNT1GNUS2401NUS2401SNT1/50X
DescriptionBipolar Transistors - Pre-Biased 200mA 50V Integrated NPN/PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationTriple--
Transistor PolarityPNP--
Typical Input Resistor175 Ohms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSC-74-6--
DC Collector/Base Gain hfe Min150--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.2 A--
Peak DC Collector Current200 mA--
Pd Power Dissipation350 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNUS2401--
PackagingReelCut Tape (CT)-
DC Current Gain hFE Max150--
Height0.94 mm--
Length3 mm--
Width1.5 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Package Case-SC-74, SOT-457-
Mounting Type-Surface Mount-
Supplier Device Package-SC-74-
Power Max-350mW-
Transistor Type-2 NPN, 1 PNP - Pre-Biased-
Current Collector Ic Max-200mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-175, 10k-
Resistor Emitter Base R2 Ohms-10k-
DC Current Gain hFE Min Ic Vce---
Vce Saturation Max Ib Ic-250mV @ 1mA, 10mA / 250mV @ 300μA, 10mA-
Current Collector Cutoff Max-500nA-
Frequency Transition---
Manufacturer Part # Description RFQ
NUS2401SNT1G Bipolar Transistors - Pre-Biased 200mA 50V Integrated NPN/PNP
NUS2401 New and Original
NUS2401SNT1/50X New and Original
NUS2401SNT1G , FMMT2484 New and Original
ON Semiconductor
ON Semiconductor
NUS2401SNT1 Bipolar Transistors - Pre-Biased 200mA 50V Integrated
NUS2401SNT1 TRANS 2NPN/1PNP PREBIAS SC74
NUS2401SNT1G Bipolar Transistors - Pre-Biased 200mA 50V Integrated NPN/PNP
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