NUS5

NUS5530MNR2G vs NUS5530MN vs NUS5531MTR2G

 
PartNumberNUS5530MNR2GNUS5530MNNUS5531MTR2G
DescriptionMOSFET INTEGRATED POWER BJTMOSFET/BJT SGL P-CH 12V 8-WDFN
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETTransistors - Special PurposeTransistors - Special Purpose
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDFN-8--
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.9 A--
Rds On Drain Source Resistance200 Ohms--
Vgs Gate Source Voltage35 V--
Pd Power Dissipation635 mW--
PackagingReelCut Tape (CT) Alternate PackagingTape & Reel (TR)
ProductMOSFET Small Signal--
SeriesNUS5530MNNUS5530MN-
BrandON Semiconductor--
Forward Transconductance Min12 S--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.001319 oz0.001319 oz-
Current Rating-2A PNP, 3.9A P-Channel2A PNP, 5.47A P-Channel
Package Case-8-VDFN Exposed Pad8-WDFN Exposed Pad
Mounting Type-Surface MountSurface Mount
Voltage Rated-35V PNP, 20V P-Channel20V PNP, 12V P-Channel
Applications-General PurposeGeneral Purpose
Supplier Device Package-8-DFN-EP (3.3x3.3)8-DFN (3x3)
Transistor Type-NPN, P-ChannelPNP, P-Channel
Pd Power Dissipation-635 mW-
Vgs Gate Source Voltage-- 35 V-
Id Continuous Drain Current-- 3.9 A-
Vds Drain Source Breakdown Voltage-- 20 V-
Rds On Drain Source Resistance-200 Ohms-
Forward Transconductance Min-12 S-
Manufacturer Part # Description RFQ
NUS5530MNR2G MOSFET INTEGRATED POWER BJT
NUS5530MN New and Original
ON Semiconductor
ON Semiconductor
NUS5531MTR2G MOSFET/BJT SGL P-CH 12V 8-WDFN
NUS5530MNR2G IGBT Transistors MOSFET INTEGRATED POWER BJT
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