PartNumber | NVD5012 | NVD5117OLT4G | NVD5117PL |
Description | |||
Manufacturer | - | - | ON Semiconductor |
Product Category | - | - | FETs - Single |
Series | - | - | NVD5117PL |
Packaging | - | - | Digi-ReelR Alternate Packaging |
Unit Weight | - | - | 0.139332 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | - | - | Si |
Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 1 Channel |
Supplier Device Package | - | - | DPAK-3 |
Configuration | - | - | Single |
FET Type | - | - | MOSFET P-Channel, Metal Oxide |
Power Max | - | - | 4.1W |
Transistor Type | - | - | 1 P-Channel |
Drain to Source Voltage Vdss | - | - | 60V |
Input Capacitance Ciss Vds | - | - | 4800pF @ 25V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 11A (Ta), 61A (Tc) |
Rds On Max Id Vgs | - | - | 16 mOhm @ 29A, 10V |
Vgs th Max Id | - | - | 2.5V @ 250μA |
Gate Charge Qg Vgs | - | - | 85nC @ 10V |
Pd Power Dissipation | - | - | 118 W |
Maximum Operating Temperature | - | - | + 175 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 132 ns |
Rise Time | - | - | 195 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | - 61 A |
Vds Drain Source Breakdown Voltage | - | - | - 60 V |
Rds On Drain Source Resistance | - | - | 16 mOhms |
Transistor Polarity | - | - | P-Channel |
Typical Turn Off Delay Time | - | - | 50 ns |
Typical Turn On Delay Time | - | - | 22 ns |
Qg Gate Charge | - | - | 85 nC |