NVD6414

NVD6414ANT4G vs NVD6414ANT4G-VF01 vs NVD6414AN

 
PartNumberNVD6414ANT4GNVD6414ANT4G-VF01NVD6414AN
DescriptionMOSFET NFET DPAK 100V 34A 38MOMOSFET NFET DPAK 100V 34A 38MO
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance37 mOhms--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation100 W--
ConfigurationSingle-Single
QualificationAEC-Q101--
PackagingReel-Reel
SeriesNTD6414AN-NTD6414AN
Transistor Type1 N-Channel-1 N-Channel
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesNVD6414ANT4G-VF01--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--100 W
Id Continuous Drain Current--80 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--37 mOhms
Manufacturer Part # Description RFQ
NVD6414ANT4G MOSFET NFET DPAK 100V 34A 38MO
NVD6414ANT4G-VF01 MOSFET NFET DPAK 100V 34A 38MO
NVD6414AN New and Original
ON Semiconductor
ON Semiconductor
NVD6414ANT4G IGBT Transistors MOSFET NFET DPAK 100V 34A 38MO
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