![]() | ![]() | ![]() | |
| PartNumber | NVE | NVE12634_REV02 | NVE25343_04 |
| Description | |||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Packaging | Reel | - | - |
| Unit Weight | 0.001058 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SC-89-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 7.6 ns | - | - |
| Rise Time | 4.4 ns | - | - |
| Vgs Gate Source Voltage | 6 V | - | - |
| Id Continuous Drain Current | 915 mA | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Rds On Drain Source Resistance | 127 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 3.7 ns | - | - |
| Qg Gate Charge | 1.82 nC | - | - |
| Forward Transconductance Min | 1.4 S | - | - |
| Channel Mode | Enhancement | - | - |