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NVF3

NVF3055-100T1G vs NVF3-MOH-5/2-K-1/4-EX 53 vs NVF3055-100

 
PartNumberNVF3055-100T1GNVF3-MOH-5/2-K-1/4-EX 53NVF3055-100
DescriptionMOSFET NFET 60V 3A 0.100R
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-223-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance88 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge10.6 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation2.1 W--
ConfigurationSingle-Single
QualificationAEC-Q101--
PackagingReel-Reel
SeriesNTF3055-100-NTF3055-100
Transistor Type1 N-Channel-1 N-Channel
BrandON Semiconductor--
Fall Time13 ns-13 ns
Product TypeMOSFET--
Rise Time14 ns-14 ns
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Unit Weight0.008818 oz-0.008826 oz
Package Case--SOT-223-3
Pd Power Dissipation--2.1 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--3 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--88 mOhms
Qg Gate Charge--10.6 nC
Manufacturer Part # Description RFQ
NVF3055L108T3G MOSFET NFET 60V 3A 0.120R
NVF3055L108T1G MOSFET NFET 60V 3A 0.120R
NVF3055-100T1G MOSFET NFET 60V 3A 0.100R
NVF3-MOH-5/2-K-1/4-EX 53 New and Original
NVF3055-100 New and Original
NVF3055-160T1G New and Original
NVF3055L108 New and Original
NVF3055L175T1G New and Original
NVF3055L108T1G-CUT TAPE New and Original
NVF3055L108T3G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor 		NVF3055-100T1G MOSFET N-CH 60V 3A SOT223
NVF3055L108T1G MOSFET N-CH 60V 3A SOT223
NVF3055L108T3G RF Bipolar Transistors MOSFET NFET 60V 3A 0.120R
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