PartNumber | NVMTS001N06CTXG | NVMTS001N06CLTXG | NVMS5P02R3G |
Description | MOSFET T6 60V SG PQFN8x8 EXPANSI | MOSFET T6 60V LL PQFN8*8 EXPANSI | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | Power-88-8 | PQFN-88-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 376 A | 398.2 A | - |
Rds On Drain Source Resistance | 910 uOhms | 810 uOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 1.2 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 113 nC | 165 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 5 W, 244 W | 244 W | - |
Configuration | Single | Single Triple Source Quad Drain | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | - |
Transistor Type | 1 N-Channel | 1 N-Channel Power MOSFET | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Forward Transconductance Min | 160 S | 275 S | - |
Fall Time | 14.5 ns | 23.3 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 21.4 ns | 25.2 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 58.3 ns | 70.7 ns | - |
Typical Turn On Delay Time | 27.4 ns | 47.2 ns | - |