NVMD

NVMD3P03R2G vs NVMD4N03R2G vs NVMD3P03

 
PartNumberNVMD3P03R2GNVMD4N03R2GNVMD3P03
DescriptionMOSFET PFET SO8 30V 3A 85 MOHMMOSFET NFET SO8 30V 4A 60MOHM
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOIC-8SOIC-8-
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.05 A--
Rds On Drain Source Resistance85 mOhms--
QualificationAEC-Q101AEC-Q101-
PackagingReelReelTape & Reel (TR)
SeriesNTMD3P03NTMD4N03NTMD3P03
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.019048 oz-0.019048 oz
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SOIC
FET Type--2 P-Channel (Dual)
Power Max--730mW
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--750pF @ 24V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--2.34A
Rds On Max Id Vgs--85 mOhm @ 3.05A, 10V
Vgs th Max Id--2.5V @ 250μA
Gate Charge Qg Vgs--25nC @ 10V
Id Continuous Drain Current--- 3.05 A
Vds Drain Source Breakdown Voltage--- 30 V
Rds On Drain Source Resistance--85 mOhms
Manufacturer Part # Description RFQ
NVMD6N04R2G MOSFET NFET SO8 40V
NVMD6P02R2G MOSFET PFET SO8 20V 7.8A 33MOHM
NVMD3P03R2G MOSFET PFET SO8 30V 3A 85 MOHM
NVMD4N03R2G MOSFET NFET SO8 30V 4A 60MOHM
NVMD3P03 New and Original
NVMD6N04R New and Original
ON Semiconductor
ON Semiconductor
NVMD6N03R2G MOSFET NFET 30V 6A 0.032R
NVMD4N03R2G MOSFET 2N-CH 30V 4A SO8FL
NVMD6N03R2G MOSFET 2N-CH 30V 6A 8SOIC
NVMD6N04R2G MOSFET 2N-CH 40V 4.6A 8-SOIC
NVMD3P03R2G RF Bipolar Transistors MOSFET PFET SO8 30V 3A 85 MOHM
NVMD6P02R2G RF Bipolar Transistors MOSFET PFET SO8 20V 7.8A 33MOHM
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