NVMFS4C3

NVMFS4C310NT1G vs NVMFS4C302NT1G vs NVMFS4C302NWFT1G

 
PartNumberNVMFS4C310NT1GNVMFS4C302NT1GNVMFS4C302NWFT1G
DescriptionMOSFET TRENCH 30V NCHMOSFET NFET SO8FL 30V 1.15MOMOSFET NFET SO8FL 30V 1.15MO
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8FLSO-8FL-8SO-8FL-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current51 A241 A241 A
Rds On Drain Source Resistance5 mOhms1.15 mOhms1.15 mOhms
Vgs th Gate Source Threshold Voltage1.3 V1.3 V1.3 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge18.6 nC82 nC82 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation32 W115 W115 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Transistor Type1 N-Channel--
BrandON SemiconductorON SemiconductorON Semiconductor
Forward Transconductance Min43 S135 S135 S
Fall Time4 ns9 ns9 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time26 ns18 ns18 ns
Factory Pack Quantity150015001500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time18 ns54 ns54 ns
Typical Turn On Delay Time7 ns13 ns13 ns
Qualification-AEC-Q101AEC-Q101
Manufacturer Part # Description RFQ
NVMFS4C310NT1G MOSFET TRENCH 30V NCH
NVMFS4C302NT1G MOSFET NFET SO8FL 30V 1.15MO
NVMFS4C310NWFT1G MOSFET TRENCH 30V NCH
NVMFS4C302NWFT1G MOSFET NFET SO8FL 30V 1.15MO
ON Semiconductor
ON Semiconductor
NVMFS4C310NWFT3G MOSFET TRENCH 30V NCH
NVMFS4C310NT3G MOSFET TRENCH 30V NCH
NVMFS4C302NT1G Power MOSFET
NVMFS4C302NWFT1G Power MOSFET
NVMFS4C310NT1G TRENCH 30V NCH
NVMFS4C310NT3G MOSFET N-CH 30V TRENCH
NVMFS4C310NWFT1G MOSFET N-CH 30V TRENCH
NVMFS4C310NWFT3G MOSFET N-CH 30V TRENCH
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