PartNumber | NVMFS5C410NLAFT1G | NVMFS5C410NLAFT3G | NVMFS5C410NL |
Description | MOSFET T6 40V HEFET | MOSFET T6 40V HEFET | |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 330 A | 330 A | - |
Rds On Drain Source Resistance | 650 uOhms | 650 uOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 143 nC | 143 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 167 W, 3.8 W | 167 W, 3.8 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Forward Transconductance Min | 190 S | 190 S | - |
Fall Time | 177 ns | 177 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 130 ns | 130 ns | - |
Factory Pack Quantity | 1500 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 66 ns | 66 ns | - |
Typical Turn On Delay Time | 20 ns | 20 ns | - |