| PartNumber | NVMFS5C430NLT1G | NVMFS5C430NLWFAFT1G | NVMFS5C430NLT3G |
| Description | MOSFET NFET SO8FL 40V 200A | MOSFET T6 40V NCH LL IN SO8FL | MOSFET NFET SO8FL 40V 200A |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-FL-8 | SO-FL-8 | SO-FL-8 |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Series | NVMFS5C430NL | - | NVMFS5C430NL |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1500 | 1500 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.003781 oz | - | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 200 A | - |
| Rds On Drain Source Resistance | - | 1.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 70 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 110 W, 3.8 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 180 S | - |
| Fall Time | - | 9 ns | - |
| Rise Time | - | 140 ns | - |
| Typical Turn Off Delay Time | - | 31 ns | - |
| Typical Turn On Delay Time | - | 15 ns | - |