PartNumber | NVMYS1D3N04CTWG | NVMYS2D1N04CLTWG | NVMYS1D2N04CLTWG |
Description | MOSFET TRENCH 6 40V SL NFET | MOSFET Power Mosfet 40V 2.15ohm 139A | MOSFET T6 40V LL LFPAK |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | LFPAK-4 | LFPAK-4 | - |
Transistor Polarity | N-Channel | N-Channel | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Technology | - | Si | - |
Number of Channels | - | 1 Channel | - |
Vds Drain Source Breakdown Voltage | - | 40 V | - |
Id Continuous Drain Current | - | 139 A | - |
Rds On Drain Source Resistance | - | 2.15 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 50 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 83 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 116 S | - |
Fall Time | - | 9.4 ns | - |
Rise Time | - | 8.3 ns | - |
Typical Turn Off Delay Time | - | 28 ns | - |
Typical Turn On Delay Time | - | 12 ns | - |