PartNumber | NX3008PBK,215 | NX3008PBKMB,315 | NX3008PBKS,115 |
Description | MOSFET 30V 230 MA P-CH TRENCH MOSFET | MOSFET P-Chan -30V -300mA | IGBT Transistors MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET |
Manufacturer | Nexperia | Nexperia | NXP Semiconductors |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | DFN-1006B-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 230 mA | 300 mA | - |
Rds On Drain Source Resistance | 4.1 Ohms | 4.1 Ohms | - |
Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
Vgs Gate Source Voltage | 4.5 V | 8 V | - |
Qg Gate Charge | 0.55 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 420 mW | 715 mW | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
Transistor Type | 1 P-Channel Trench MOSFET | 1 P-Channel | - |
Brand | Nexperia | Nexperia | - |
Fall Time | 38 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 30 ns | - | - |
Factory Pack Quantity | 3000 | 10000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 65 ns | - | - |
Typical Turn On Delay Time | 19 ns | - | - |
Unit Weight | 0.000882 oz | 0.000021 oz | - |
Series | - | - | Automotive, AEC-Q101, TrenchMOS |
Package Case | - | - | 6-TSSOP, SC-88, SOT-363 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 6-TSSOP |
FET Type | - | - | 2 P-Channel (Dual) |
Power Max | - | - | 445mW |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 46pF @ 15V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 200mA |
Rds On Max Id Vgs | - | - | 4.1 Ohm @ 200mA, 4.5V |
Vgs th Max Id | - | - | 1.1V @ 250μA |
Gate Charge Qg Vgs | - | - | 0.75nC @ 4.5V |