PartNumber | PBHV8115TLHR | PBHV8115T,215 | PBHV8115X,115 |
Description | Bipolar Transistors - BJT 150 V, 1 A NPN high-voltage low VCEsat BISS transistor | Bipolar Transistors - BJT TRANS HV BISS TAPE-7 | Bipolar Transistors - BJT 150V 1A NPN high vltg low VCEsat tran |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-89-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 150 V | 150 V | 150 V |
Collector Base Voltage VCBO | 400 V | 400 V | 400 V |
Emitter Base Voltage VEBO | 6 V | 6 V | 6 V |
Collector Emitter Saturation Voltage | 50 mV | - | 33 mV |
Maximum DC Collector Current | 1 A | 1 A | 2 A |
Gain Bandwidth Product fT | 30 MHz | 30 MHz | 30 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 300 | - | - |
Packaging | Reel | Reel | Reel |
Brand | Nexperia | Nexperia | Nexperia |
Continuous Collector Current | 1 A | - | 400 mA |
DC Collector/Base Gain hfe Min | 50 | - | - |
Pd Power Dissipation | 300 mW | 300 mW | 520 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 1000 |
Subcategory | Transistors | Transistors | Transistors |
Height | - | 1 mm | - |
Length | - | 3 mm | - |
Width | - | 1.4 mm | - |
Part # Aliases | - | PBHV8115T T/R | - |
Unit Weight | - | 0.035274 oz | 0.001411 oz |