PartNumber | PBHV8515QAZ | PBHV8540T,215 | PBHV8540X,115 |
Description | Bipolar Transistors - BJT PBHV8515QA/DFN1010D-3/REEL 7 | Bipolar Transistors - BJT HIGH VOLTAGE BISS | Bipolar Transistors - BJT 500V 0.5A NPN high vltg low VCEsat tran |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Package / Case | DFN-1010D-3 | SOT-23-3 | SOT-89-3 |
Packaging | Reel | Reel | Reel |
Brand | Nexperia | Nexperia | Nexperia |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 5000 | 3000 | 1000 |
Subcategory | Transistors | Transistors | Transistors |
Mounting Style | - | SMD/SMT | SMD/SMT |
Transistor Polarity | - | NPN | NPN |
Configuration | - | Single | Single |
Collector Emitter Voltage VCEO Max | - | 400 V | 400 V |
Collector Base Voltage VCBO | - | 500 V | 500 V |
Emitter Base Voltage VEBO | - | 6 V | 6 V |
Maximum DC Collector Current | - | 1 A | - |
Gain Bandwidth Product fT | - | 30 MHz | 30 MHz |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | + 150 C |
DC Current Gain hFE Max | - | 100 at 50 mA, 10 V | 200 |
Height | - | 1 mm | - |
Length | - | 3 mm | - |
Width | - | 1.4 mm | - |
Continuous Collector Current | - | 500 mA | 0.5 A |
DC Collector/Base Gain hfe Min | - | 200 | - |
Pd Power Dissipation | - | 300 mW | 1.5 W |
Part # Aliases | - | PBHV8540T T/R | - |
Unit Weight | - | 0.000282 oz | 0.003880 oz |
Technology | - | - | Si |
Collector Emitter Saturation Voltage | - | - | 0.2 V |