PartNumber | PBRP113ET,215 | PBRP113ZT,215 |
Description | Bipolar Transistors - Pre-Biased BISS RET | Bipolar Transistors - Pre-Biased BISS RET |
Manufacturer | Nexperia | Nexperia |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y |
Configuration | Single | Single |
Transistor Polarity | PNP | PNP |
Typical Input Resistor | 1 kOhms | 1 kOhms |
Typical Resistor Ratio | 1 | 0.1 |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-236AB-3 | SOT-23-3 |
Collector Emitter Voltage VCEO Max | 40 V | - 40 V |
Continuous Collector Current | 600 mA | 600 mA |
Peak DC Collector Current | 600 mA | 600 mA |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Packaging | Reel | Reel |
Height | 1 mm | 1 mm |
Length | 3 mm | 3 mm |
Width | 1.4 mm | 1.4 mm |
Brand | Nexperia | Nexperia |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Qualification | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | Transistors | Transistors |
Part # Aliases | PBRP113ET T/R | PBRP113ZT T/R |
Unit Weight | 0.000268 oz | 0.000282 oz |
DC Collector/Base Gain hfe Min | - | 190 |
Pd Power Dissipation | - | 250 mW |
DC Current Gain hFE Max | - | 270 |
Emitter Base Voltage VEBO | - | - 5 V |