PartNumber | PBSS5230T,215 | PBSS5230QAZ | PBSS5230PAP,115 |
Description | Bipolar Transistors - BJT TRANS BISS TAPE-7 | Bipolar Transistors - BJT 30 V, 2A PNP low VCE sat (BISS) transi | Bipolar Transistors - BJT 30V 2A PNP/PNP lo VCEsat transistor |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-236AB-3 | DFN-1010D-3 | DFN-2020-6 |
Transistor Polarity | PNP | - | PNP |
Configuration | Single | - | Dual |
Collector Emitter Voltage VCEO Max | 30 V | - | - 30 V |
Collector Base Voltage VCBO | 30 V | - | - 30 V |
Emitter Base Voltage VEBO | 5 V | - | - 7 V |
Maximum DC Collector Current | 2 A | - | - 3 A |
Gain Bandwidth Product fT | 200 MHz | - | 95 MHz |
Minimum Operating Temperature | - 65 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Height | 1 mm | - | - |
Length | 3 mm | - | - |
Packaging | Reel | Reel | Reel |
Width | 1.4 mm | - | - |
Brand | Nexperia | Nexperia | Nexperia |
Pd Power Dissipation | 480 mW | - | 1450 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 5000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | PBSS5230T T/R | - | - |
Unit Weight | 0.000265 oz | - | - |
Collector Emitter Saturation Voltage | - | - | - 75 mV |
DC Current Gain hFE Max | - | - | 370 |
Continuous Collector Current | - | - | - 2 A |
DC Collector/Base Gain hfe Min | - | - | 260 |