PartNumber | PBSS3515VS,115 | PBSS3515MB,315 | PBSS3515M,315 |
Description | Bipolar Transistors - BJT TRANS BISS TAPE-7 | Bipolar Transistors - BJT 15 V, 0.5 A PNP low VCEsat transistor | Bipolar Transistors - BJT TRANS BISS TAPE-7 |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | - | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SSmini-6 | DFN-1006B-3 | DFN-1006-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Dual | Single | Single |
Collector Emitter Voltage VCEO Max | 15 V | - 15 V | - 15 V |
Collector Base Voltage VCBO | 15 V | - 15 V | 15 V |
Emitter Base Voltage VEBO | 6 V | - 6 V | - 6 V |
Maximum DC Collector Current | 0.5 A | - 1 A | - 1 A |
Gain Bandwidth Product fT | 280 MHz | 280 MHz | 280 MHz |
Minimum Operating Temperature | - 65 C | - 55 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 200 at 10 mA, 2 V | - | 200 at 10 mA, 2 V |
Height | 0.6 mm | - | 0.47 mm |
Length | 1.7 mm | - | 1.02 mm |
Packaging | Reel | Reel | Reel |
Width | 1.3 mm | - | 0.62 mm |
Brand | Nexperia | Nexperia | Nexperia |
DC Collector/Base Gain hfe Min | 200 at 10 mA, 2 V, 150 at 100 mA, 2 V, 90 at 500 mA, 2 V | 200 | 200 |
Pd Power Dissipation | 200 mW | 590 mW | 250 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 4000 | 10000 | 10000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | PBSS3515VS T/R | - | PBSS3515M T/R |
Unit Weight | 0.000099 oz | 0.000024 oz | - |
Collector Emitter Saturation Voltage | - | - 25 mV | - |
Continuous Collector Current | - | - 500 mA | - 500 mA |