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| PartNumber | PBSS4032SP,115 | PBSS4032SN,115 | PBSS4032SPN,115 |
| Description | Bipolar Transistors - BJT Dual PNP -30V -4.8A 0.73W 115MHz | Bipolar Transistors - BJT Dual NPN 30V 5.7A 0.73W 140MHz | Bipolar Transistors - BJT Dual +/-30V '+5.7A -5.7A 0.73W 140MHz |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Transistor Polarity | PNP | NPN | NPN, PNP |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | - 30 V | 30 V | 30 V |
| Emitter Base Voltage VEBO | - 5 V | 5 V | 5 V |
| Gain Bandwidth Product fT | 115 MHz | 140 MHz | 140 MHz |
| Packaging | Reel | Reel | Reel |
| Brand | Nexperia | Nexperia | Nexperia |
| Continuous Collector Current | - 4.8 A | 5.7 A | 5.7 A |
| DC Collector/Base Gain hfe Min | 200 | 300 | 300 |
| Pd Power Dissipation | 730 mW | 730 mW | 730 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PBSS4032SP,115 | Bipolar Transistors - BJT Dual PNP -30V -4.8A 0.73W 115MHz | |
| PBSS4032SN,115 | Bipolar Transistors - BJT Dual NPN 30V 5.7A 0.73W 140MHz | ||
| PBSS4032SPN,115 | Bipolar Transistors - BJT Dual +/-30V '+5.7A -5.7A 0.73W 140MHz | ||
| PBSS4032SN,115 | Bipolar Transistors - BJT Dual NPN 30V 5.7A 0.73W 140MHz | ||
| PBSS4032SP,115 | TRANS 2PNP 30V 4.8A 8SO | ||
| PBSS4032SPN,115 | Bipolar Transistors - BJT Dual +/-30V '+5.7A -5.7A 0.73W 140MHz | ||
| PBSS4032SN115 | Now Nexperia PBSS4032SN - Small Signal Bipolar Transistor, 5.7A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, SO8 | ||
| PBSS4032SP | TRANSISTOR,PNP/PNP,30V,SO8, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-30V, Power Dissipation Pd:2.3W, DC Collector Current:-4.8A, DC Current Gain hFE:200hFE, No. of Pins:8Pins | ||
| PBSS4032SP115 | Now Nexperia PBSS4032SP - Small Signal Bipolar Transistor, 4.8A I(C), 30V V(BR)CEO, 2-Element, PNP, Silicon, SO8 | ||
| PBSS4032SPN115 | Now Nexperia PBSS4032SPN - Small Signal Bipolar Transistor, 5.7A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SO8 |