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| PartNumber | PBSS5240V,115 | PBSS5240V | PBSS5240V115 |
| Description | Bipolar Transistors - BJT TRANS BISS TAPE-7 | Now Nexperia PBSS5240V - Small Signal Bipolar Transistor, SOT6 | |
| Manufacturer | Nexperia | - | |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | Details | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SSmini-6 | SS-Mini | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 40 V | 40 V | - |
| Collector Base Voltage VCBO | 40 V | 40 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Maximum DC Collector Current | 1.8 A | 1.8 A | - |
| Gain Bandwidth Product fT | 150 MHz | 150 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 300 at 1 mA, 5 V | 300 at 1 mA at 5 V | - |
| Height | 0.6 mm | - | - |
| Length | 1.7 mm | - | - |
| Packaging | Reel | Reel | - |
| Width | 1.3 mm | - | - |
| Brand | Nexperia | NXP Semiconductors | - |
| DC Collector/Base Gain hfe Min | 300 at 1 mA, 5 V, 300 at 100 mA, 5 V, 250 at 500 mA, 5 V, 160 at 1 A, 5 V | 300 at 1 mA at 5 V 300 at 100 mA at 5 V 250 at 500 mA at 5 V 160 at 1 A at 5 V | - |
| Pd Power Dissipation | 1200 mW | 1200 mW | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | PBSS5240V T/R | PBSS5240V T/R | - |
| Unit Weight | 0.000102 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PBSS5240V,115 | Bipolar Transistors - BJT TRANS BISS TAPE-7 | |
| PBSS5240V,115 | Bipolar Transistors - BJT TRANS BISS TAPE-7 | ||
| PBSS5240V | New and Original | ||
| PBSS5240V115 | Now Nexperia PBSS5240V - Small Signal Bipolar Transistor, SOT6 |