PartNumber | PCP1208-TD-H | PCP1208 | PCP1208-TD-E |
Description | Bipolar Transistors - BJT BIP NPN 0.7A 200V | ||
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-89-3 | - | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 200 V | - | - |
Collector Base Voltage VCBO | 220 V | - | - |
Emitter Base Voltage VEBO | 8 V | - | - |
Collector Emitter Saturation Voltage | 115 mV | - | - |
Maximum DC Collector Current | 700 mA | - | - |
Gain Bandwidth Product fT | 120 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | PCP1208 | PCP1208 | - |
DC Current Gain hFE Max | 560 | - | - |
Packaging | Reel | Reel | - |
Brand | ON Semiconductor | - | - |
DC Collector/Base Gain hfe Min | 200 | - | - |
Pd Power Dissipation | 3.5 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.001965 oz | - | - |