PD8501

PD85015-E vs PD85015STR-E vs PD85015S-E

 
PartNumberPD85015-EPD85015STR-EPD85015S-E
DescriptionRF MOSFET Transistors POWER R.F. N-Ch TransRF MOSFET Transistors POWER R.F. N-Ch TransRF MOSFET Transistors POWER R.F. N-Ch Trans
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryRF MOSFET TransistorsRF MOSFET TransistorsTransistors - FETs, MOSFETs - Single
RoHSYY-
Transistor PolarityN-ChannelN-ChannelN-Channel
TechnologySiSiSi
Id Continuous Drain Current5 A5 A-
Vds Drain Source Breakdown Voltage40 V40 V-
Gain16 dB16 dB16 dB at 870 MHz
Output Power15 W15 W15 W
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerSO-10RF-Formed-4PowerSO-10RF-Straight-4-
PackagingTubeReelTube
ConfigurationSingleSingle-
Height3.5 mm3.5 mm-
Length7.5 mm7.5 mm-
Operating Frequency1 GHz1 GHz1 GHz
SeriesPD85015-EPD85015-EPD85015-E
TypeRF Power MOSFETRF Power MOSFETRF Power MOSFET
Width9.4 mm9.4 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Channel ModeEnhancementEnhancement-
Moisture SensitiveYesYes-
Pd Power Dissipation59 W59 W-
Product TypeRF MOSFET TransistorsRF MOSFET Transistors-
Factory Pack Quantity400600-
SubcategoryMOSFETsMOSFETs-
Vgs Gate Source Voltage15 V15 V-
Unit Weight0.105822 oz0.105822 oz-
Package Case--PowerSO-10RF (Straight lead)-4
Pd Power Dissipation--59 W
Vgs Gate Source Voltage--15 V
Id Continuous Drain Current--5 A
Vds Drain Source Breakdown Voltage--40 V
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
PD85015-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85015TR-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85015STR-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85015STR-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85015TR-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85015-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85015S-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85015 New and Original
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