PD8502

PD85025-E vs PD85025S-E vs PD85025C

 
PartNumberPD85025-EPD85025S-EPD85025C
DescriptionRF MOSFET Transistors POWER R.F. N-Ch TransRF MOSFET Transistors POWER R.F. N-Ch TransRF MOSFET Transistors RF Power Trans. LDMOST family
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryRF MOSFET TransistorsTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
Transistor PolarityN-ChannelN-ChannelN-Channel
TechnologySiSiSi
Id Continuous Drain Current7 A--
Vds Drain Source Breakdown Voltage40 V--
Gain15.7 dB15.7 dB at 870 MHz16 dB at 945 MHz
Output Power25 W25 W25 W
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerSO-10RF-Formed-4--
PackagingTubeTubeBulk
ConfigurationSingle--
Height3.5 mm--
Length9.4 mm--
Operating Frequency1 GHz1 GHz1 GHz
SeriesPD85025-EPD85025-EPD85025
TypeRF Power MOSFETRF Power MOSFETRF Power MOSFET
Width7.5 mm--
BrandSTMicroelectronics--
Channel ModeEnhancement--
Moisture SensitiveYes--
Pd Power Dissipation79 W--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Vgs Gate Source Voltage15 V--
Unit Weight0.105822 oz--
Package Case-PowerSO-10RF (Straight Lead)M243
Pd Power Dissipation-79 W93 W
Vgs Gate Source Voltage-15 V+/- 20 V
Id Continuous Drain Current-7 A7 A
Vds Drain Source Breakdown Voltage-40 V40 V
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
PD85025TR-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85025-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85025STR-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85025TR-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85025S-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85025-E RF MOSFET Transistors POWER R.F. N-Ch Trans
PD85025C RF MOSFET Transistors RF Power Trans. LDMOST family
PD85025 New and Original
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