PHB29

PHB29N08T,118 vs PHB29N08 vs PHB29N08T

 
PartNumberPHB29N08T,118PHB29N08PHB29N08T
DescriptionMOSFET TAPE13 MOSFETMOSFET, N-CH, 75V, 27A, TO-263
ManufacturerNexperiaPHILIPS-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current27 A--
Rds On Drain Source Resistance96 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge19 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation88 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.5 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandNexperia--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time70 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time9.5 ns--
Part # Aliases/T3 PHB29N08T--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PHB29N08T,118 MOSFET TAPE13 MOSFET
PHB29N08T,118 IGBT Transistors MOSFET TAPE13 MOSFET
PHB29N08 New and Original
PHB29N08T MOSFET, N-CH, 75V, 27A, TO-263
PHB29N08T118 Now Nexperia PHB29N08T - Power Field-Effect Transistor, 27A I(D), 75V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
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