PartNumber | PHB29N08T,118 | PHB29N08T | PHB29N08T118 |
Description | MOSFET TAPE13 MOSFET | MOSFET, N-CH, 75V, 27A, TO-263 | Now Nexperia PHB29N08T - Power Field-Effect Transistor, 27A I(D), 75V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK |
Manufacturer | Nexperia | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 75 V | - | - |
Id Continuous Drain Current | 27 A | - | - |
Rds On Drain Source Resistance | 96 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 19 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 88 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 4.5 mm | - | - |
Length | 10.3 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 9.4 mm | - | - |
Brand | Nexperia | - | - |
Fall Time | 9 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 70 ns | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 15 ns | - | - |
Typical Turn On Delay Time | 9.5 ns | - | - |
Part # Aliases | /T3 PHB29N08T | - | - |
Unit Weight | 0.139332 oz | - | - |