 |  | | |
| PartNumber | PHB45NQ10T,118 | PHB45NQ10T | PHB45NQ10T+118 |
| Description | MOSFET TRENCH-100 | Now Nexperia PHB45NQ10T - Power Field-Effect Transistor, 47A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 75 A | - | - |
| Rds On Drain Source Resistance | 8.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 230 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.5 mm | - | - |
| Length | 10.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.4 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 226 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 185 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 424 ns | - | - |
| Typical Turn On Delay Time | 47 ns | - | - |
| Part # Aliases | /T3 PHB45NQ10T | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PHB45NQ10T,118 | MOSFET TRENCH-100 | |
| PHB45NQ10T,118 | RF Bipolar Transistors MOSFET TRENCH-100 | ||
| PHB45NQ10T | New and Original | ||
| PHB45NQ10T+118 | Now Nexperia PHB45NQ10T - Power Field-Effect Transistor, 47A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| PHB45NQ10T118 | Now Nexperia PHB45NQ10T - Power Field-Effect Transistor, 47A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |