 | | |
| PartNumber | PHE13003C,126 | PHE13003C,412 |
| Description | Bipolar Transistors - BJT Single NPN 1.5A 2.1W | Bipolar Transistors - BJT Silicon diffused power transistor |
| Manufacturer | WeEn Semiconductors | WeEn Semiconductors |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 400 V | 400 V |
| Collector Base Voltage VCBO | 700 V | 700 V |
| Emitter Base Voltage VEBO | 9 V | 9 V |
| Collector Emitter Saturation Voltage | 1.5 V | 1.5 V |
| Maximum DC Collector Current | 1.5 A | 1.5 A |
| Maximum Operating Temperature | + 150 C | + 150 C |
| DC Current Gain hFE Max | 25 | 25 |
| Brand | WeEn Semiconductors | WeEn Semiconductors |
| DC Collector/Base Gain hfe Min | 5 | 5 |
| Pd Power Dissipation | 2.1 W | 2.1 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 10000 | 5000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | 934063922126 | 934063922412 |
| Unit Weight | 0.016000 oz | 0.007654 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
WeEn Semiconductors |
PHE13003C,126 | Bipolar Transistors - BJT Single NPN 1.5A 2.1W | |
| PHE13003C,412 | Bipolar Transistors - BJT Silicon diffused power transistor | ||
| PHE13003C,412 | Bipolar Transistors - BJT Silicon diffused power transisto | ||
| PHE13003C,126 | Bipolar Transistors - BJT Single NPN 1.5A 2.1W | ||
| PHE13003C | New and Original | ||
| PHE13003C+126 | Now WeEn - PHE13003C - Power Bipolar Transistor - TO-92 | ||
| PHE13003C126 | Now WeEn - PHE13003C - Power Bipolar Transistor - TO-92 | ||
| PHE13003C412 | Now WeEn - PHE13003C - Power Bipolar Transistor - TO-92 |